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PD- 95663
SMPS MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free
l
IRFP450NPBF
HEXFET(R) Power MOSFET
VDSS
500V
Rds(on) max
0.37
ID
14A
Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001)
l
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
14 8.8 56 200 1.6 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Typical SMPS Topologies
l l l
Two transistor Forward Half Bridge and Full Bridge PFC Boost
through are on page 8
Notes
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7/30/04
IRFP450NPBF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 --- --- 3.0 --- --- --- --- Typ. --- 0.59 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.37 VGS = 10V, ID = 8.4A 5.0 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 7.9 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 20 63 29 25 2260 210 14 2410 59 110 Max. Units Conditions --- S VDS = 50V, ID = 8.4A 77 ID = 14A 26 nC VDS = 400V 34 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 14A ns --- RG = 6.2 --- VGS = 10V,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, V DS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, V DS = 0V to 400V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
170 14 20
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
--- 0.24 ---
Max.
0.64 --- 40
Units
C/W
Diode Characteristics
Min. Typ. Max. Units IS
ISM
VSD trr Qrr ton
Conditions D MOSFET symbol 14 --- --- showing the A G integral reverse --- --- 56 S p-n junction diode. --- --- 1.4 V TJ = 25C, IS = 14A, VGS = 0V --- 430 650 ns TJ = 25C, IF = 14A --- 3.7 5.6 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFP450NPBF
100
VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP
10
1
6.0V
6.0V
0.1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 1 10
20s PULSE WIDTH TJ = 150 C
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 14A
I D , Drain-to-Source Current (A)
TJ = 150 C
10
2.5
2.0
1.5
1
TJ = 25 C
1.0
0.5
0.1 6.0
V DS = 50V 20s PULSE WIDTH 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFP450NPBF
100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = Cds + Cgd
20
ID = 14A VDS = 400V VDS = 250V VDS = 100V
10000
VGS , Gate-to-Source Voltage (V)
16
C, Capacitance(pF)
Ciss
1000
12
100
Coss
8
10
Crss
4
1 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
0 0 20 40
FOR TEST CIRCUIT SEE FIGURE 13
60 80
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
10
TJ = 150 C
10 100sec 1msec Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 10000 VDS , Drain-toSource Voltage (V)
1
1
TJ = 25 C
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
10msec
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFP450NPBF
14 12
V DS VGS RG
RD
D.U.T.
+
ID , Drain Current (A)
10 8 6 4 2 0 25 50 75 100 125 150
-VDD
10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
VDS 90%
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50
0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t2
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP450NPBF
15V
EAS , Single Pulse Avalanche Energy (mJ)
300
TOP
250
VDS
L
DRIVER
BOTTOM
ID 6.3A 8.9A 14A
200
RG
20V
D.U.T
IAS tp
+ V - DD
A
150
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
100
50
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFP450NPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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7
IRFP450NPBF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position indicates "Lead-Free"
PART NUMBE R INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
IRF PE30
56 035H 57
DATE CODE YEAR 0 = 2000 WEEK 35 LINE H
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 1.7mH
RG = 25, IAS = 14A. (See Figure 12)
ISD 14A, di/dt 510A/s, VDD V(BR)DSS,
TJ 150C
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04
8
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